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SPI Series: Ultra Compact Power Inductors for Next Gen Portable Electronics

SPI Series: Ultra Compact Power Inductors for Next Gen Portable Electronics

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    • Payment Type: L/C,T/T
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    • Transportation: Ocean,Land,Air,Express
    • Port: Xi'an,Shanghai
    Description
    Product Attributes

    Model No.SPI-S

    BrandFERRTX

    SpeciesInductor Surface Mount

    Supply TypeOriginal Manufacturer

    Place Of OriginChina

    FeaturesNot Applicable

    Installation MethodSurface Mount

    Current RatingUp to 5A (IDC)

    DCR Range0.021Ω to 0.040Ω

    Operating Temp-40°C to +85°C

    Military StandardMIL-STD-202E Compliant

    Packaging & Delivery
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    Supply Ability & Additional Information

    TransportationOcean,Land,Air,Express

    Place of OriginChina

    Supply Ability2~8weeks

    CertificateRoHS/ISO/UL/CE/IATF 16949/CNAS

    PortXi'an,Shanghai

    Payment TypeL/C,T/T

    Product Description

    FERRTX engineers cutting-edge magnetic solutions that redefine power density limits. Our SPI Series Power Inductors deliver industry-leading 3A–5A currents in sub-5mm footprints—enabling 23% smaller GaN adapters, 18% lighter laptops, and uncompromised efficiency for mission-critical portable devices.

    Breakthrough Performance in Miniature Packages

    FERRTX-SI-SPI-S

    Extreme Current Density

    • 5A in 0804 Footprint: SPI0804S inductors achieve 5A IDC with DCR as low as 0.021Ω (model SPI0804S-1R0), ideal for space-constrained GaN laptop adapters requiring ≤30mm³ volume.
    • Anti-Tombstoning Flat Top: Patented flat-top structure ensures 99.9% pick-and-place accuracy, eliminating solder defects in high-speed SMT lines.

    Unmatched Power Efficiency

    • Ultra-Low 0.04Ω DCR: SPI0402S-1R0 reduces conduction losses by 40% vs competitors, boosting efficiency to 93.5%+ in 100W PD fast chargers.
    • High-Frequency Stability: Ferrite Core maintains <2% inductance drop at 5MHz, critical for EMI Filter stages in 5G smartphones.

    Rugged Reliability

    • Military-Grade Endurance: Withstands 260°C reflow for 10 seconds (MIL-STD-202E compliant) and operates at -40°C to +85°C.
    • Shielding Inductor construction minimizes EMI leakage by 20dB, protecting sensitive Sensor circuits in medical wearables.

    Technical Specifications & Validation

    SPI Series Performance Summary

    Model L Range (µH) IDC Max (A) DCR Max (Ω) Size (mm) Temp Range
    SPI0402S-1R0 1.0 ±20% 3.0 0.040 4.45×2.92 -40°C~+85°C
    SPI0804S-1R0 1.0 ±20% 5.0 0.021 9.40×5.08 -40°C~+85°C
    SPI1306S-100 10 ±20% 3.9 0.040 15.24×7.62 -40°C~+85°C

    Certifications:

    • RoHS/REACH Compliant
    • MIL-STD-202E Solvent Resistance
    • Halogen-Free Terminations

    Dominant Applications

    A. Ultra-Portable Power Systems

    • 100W GaN Laptop Adapters: SPI0804S enables 49cc volume (47×35×30mm) with 1.32W/cm³ density—23% smaller than conventional designs.
    • Step-Up Converters: Achieve 12V→60V conversion at 95.3% efficiency using SPI0402S in solar-powered wearables.

    B. High-Density Consumer Electronics

    • Smartphone RF Power: Integrate SPI0402S as RF Inductor in 5G PA modules, reducing noise by 15dBμV vs unshielded solutions.
    • Multi-Port Chargers: Replace bulky Transformer with SPI1306S in 65W PPS designs, saving 60% PCB area.

    C. Industrial & Medical Devices

    • Battery-Powered Sensors: SPI0402S’s 0.04Ω DCR extends IoT sensor runtime by 30%.
    • EMI Filter Networks: Shielded structure suppresses common-mode noise in motor drives and CT scanners.

    Design Acceleration Resources

    • Thermal Layout Calculator: Optimize pad design (e.g., 3.56×1.4mm for SPI0402S) to prevent tombstonin.
    • SPICE Models: Simulate transient response in boost/buck topologies using ANSYS®-compatible files.
    • GaN Adapter Reference Kit: Download 100W PD3.0 schematic with BOM and Gerber files.

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